DOI: https://doi.org/10.15421/082001

ELECTRODEPOSITION OF COPPER FROM A METHANESULPHONATE ELECTROLYTE

Irina V. Sknar, Yuri E. Sknar, Oleksandra O. Savchuk, Alexander S. Baskevich, Oleg V. Kozhura, Tatyana V. Hrydnieva

Abstract


The dependences of the electrical conductivity of the methanesulfonate copper plating electrolyte on the concentrations of acid and copper methanesulfonate have been established. It has been shown that an electrolyte with a composition of 0.6 M Cu (CH3SO3)2 + 0.6 M CH3SO3Н is characterized by maximum copper ion concentration and high electrical conductivity.  The study of the morphology of the copper coatings obtained in different hydrodynamic modes showed that smooth fine-grained deposits, well adhered to the base can be obtained from  stirred methanesulfonate electrolyte in a range of current densities of 1 to 7 A/dm2.

High-quality deposits from a quiescent electrolyte are obtained at current densities below 3 A/dm2.X-ray analysis of copper coatings deposited from a methanesulfonate electrolyte showed that their structure corresponds to a face-centred cubic lattice. The deposit crystallite sizes decrease with increasing the current density. The dependence of the dislocation density on the current density is antibate. Stirring of the electrolyte mitigates the impact of current density on the parameters of the structure of coating , which changes are significantly reduced. It has been shown that stirring the electrolyte affects the structurally dependent properties of the copper coatings, such as internal stress and micro hardness. Along with the diminishing crystallite sizes, an increase in the internal stress and micro hardness of the coatings is observed. Stirring, along with the expansion of the range of coating current densities can reduce the internal stress of the ones. This is an important factor for obtaining thick layers of copper.

Keywords


еlectrodeposition; methanesulfonate electrolyte; copper; electrical conductivity; physical and mechanical properties; morphology, structure

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